A Product Line of
Diodes Incorporated
ZVP1320F
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 5)
Symbol
V DSS
V GSS
I D
I DM
Value
-200
±20
-35
-400
Unit
V
V
mA
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 4)
(Note 4)
P D
R θ JA
T J , T STG
350
357
-55 to +150
mW
°C/W
°C
Notes:
4. For a device mounted on 25mm X 25mm X 1.6mm FR-4 PCV with high coverage of single sided 1oz copper, in still air condition.
5. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
ZVP1320F
Document number: DS33391 Rev. 4 - 2
2 of 8
www.diodes.com
January 2012
? Diodes Incorporated
相关PDF资料
ZVP2106ASTOB MOSFET P-CHAN 60V TO92-3
ZVP2106GTC MOSFET P-CHAN 60V SOT223
ZVP2110ASTOB MOSFET P-CHAN 100V TO92-3
ZVP2110GTC MOSFET P-CHAN 100V SOT223
ZVP2120ASTOB MOSFET P-CHAN 200V TO92-3
ZVP2120GTC MOSFET P-CHAN 200V SOT223
ZVP3306ASTZ MOSFET P-CHAN 60V TO92-3
ZVP3306FTC MOSFET P-CHAN 60V SOT23-3
相关代理商/技术参数
ZVP2106 制造商:Diodes Zetex 功能描述:P-channel MOSFET,ZVP2106A 0.28A 60V
ZVP2106A 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZVP2106A 制造商:Diodes Incorporated 功能描述:MOSFET P E-LINE
ZVP2106AM1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 280MA I(D) | SO
ZVP2106AS 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZVP2106ASTOA 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZVP2106ASTOB 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZVP2106ASTZ 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube